Micron Technology 16JSF25664HZ-1G1F1 2GB vs Crucial Technology CT16G4SFD8213.C16FAD 16GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 29% 更低的延时

Crucial Technology CT16G4SFD8213.C16FAD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FAD 16GB

报告一个错误

更快的读取速度，GB/s

12.3 10.5

测试中的平均数值
更快的写入速度，GB/s

9.7 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 41
读取速度，GB/s

10.5 12.3
写入速度，GB/s

7.1 9.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR26D4S9S1KA-4 4GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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G Skill Intl F4-3200C14-8GTZKW 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB