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Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Crucial Technology CT4G4DFS8213.8FA11?? 4GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Crucial Technology CT4G4DFS8213.8FA11?? 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 29
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 24
  • 读取速度，GB/s
    10.5 left arrow 16.1
  • 写入速度，GB/s
    7.1 left arrow 12.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 2719

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Kingston 9905469-124.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905711-015.A00G 4GB
Kingston 9905711-015.A00G 4GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMR32GX4M4C3000C15 8GB
Corsair CMR32GX4M4C3000C15 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905702-029.A00G 8GB
Kingston 9905702-029.A00G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
内存RAM