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Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD43000C158G2NJK 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Panram International Corporation PUD43000C158G2NJK 8GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Panram International Corporation PUD43000C158G2NJK 8GB 需要考虑的原因
Panram International Corporation PUD43000C158G2NJK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 29
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 19
  • 读取速度，GB/s
    10.5 left arrow 19.8
  • 写入速度，GB/s
    7.1 left arrow 15.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3370

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Panram International Corporation PUD43000C158G2NJK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT64GX4M4K3600C18 16GB
Corsair CMT64GX4M4K3600C18 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMK32GX4M2K3600C16 16GB
Corsair CMK32GX4M2K3600C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128401EFA3SC2 512MB
Qimonda 72T128401EFA3SC2 512MB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965640-008.A01G 32GB
Kingston 9965640-008.A01G 32GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM