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Micron Technology 16JSF51264HZ-1G4D1 4GB
SK Hynix HMT351S6BFR8C-H9 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB vs SK Hynix HMT351S6BFR8C-H9 4GB

总分
star star star star star
Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

总分
star star star star star
SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

差异 规格 评论

差异

Micron Technology 16JSF51264HZ-1G4D1 4GB 需要考虑的原因
Micron Technology 16JSF51264HZ-1G4D1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 49
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    10.5 left arrow 8.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 5.2
    测试中的平均数值
SK Hynix HMT351S6BFR8C-H9 4GB 需要考虑的原因
SK Hynix HMT351S6BFR8C-H9 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 16JSF51264HZ-1G4D1 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 49
  • 读取速度，GB/s
    10.5 left arrow 8.2
  • 写入速度，GB/s
    6.8 left arrow 5.2
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1682 left arrow 1223

Micron Technology 16JSF51264HZ-1G4D1 4GB RAM的比较

A-DATA Technology AM1L16BC4R1-B1HS 4GB
Corsair CMSO4GX3M1A1333C9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB RAM的比较

Crucial Technology CT8G4SFRA32A.C16FG 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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