Micron Technology 16JTF25664AZ-1G4F1 2GB vs Corsair CMD16GX4M4B3300C16 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Corsair CMD16GX4M4B3300C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3300C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 -74% 更低的延时
更快的读取速度，GB/s

16.5 13.6

测试中的平均数值
更快的写入速度，GB/s

13.1 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMD16GX4M4B3300C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 23
读取速度，GB/s

13.6 16.5
写入速度，GB/s

8.3 13.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2400C15/16G 16GB

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Corsair CMK16GX4M4B3200C16 4GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BLS8G4D240FSBK.8FD 8GB

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Kingston 99U5584-004.A00LF 4GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Samsung M471B5173QH0-YK0 4GB

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Samsung M3 78T5663FB3-CF7 2GB

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Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Crucial Technology CT32G48C40U5.M16A1 32GB

Crucial Technology CT32G48C40U5.M16A1 32GB