Micron Technology 16JTF25664AZ-1G4F1 2GB vs Corsair CMV8GX4M1A2666C18 8GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Corsair CMV8GX4M1A2666C18 8GB

Corsair CMV8GX4M1A2666C18 8GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Corsair CMV8GX4M1A2666C18 8GB

需要考虑的原因
Corsair CMV8GX4M1A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

17.7 13.6

测试中的平均数值
更快的写入速度，GB/s

13.2 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMV8GX4M1A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

13.6 17.7
写入速度，GB/s

8.3 13.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2035 3304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5673FH0-CF8 2GB

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

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Kingston 99U5429-007.A00LF 2GB

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Crucial Technology BLS16G4D240FSC.16FAD 16GB

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Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Kingston ACR32D4U2S8HD-8X 8GB

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Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

Kingston 99U5403-465.A00LF 8GB

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Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Corsair CMK32GX4M4C3333C16 8GB

Corsair CMK32GX4M4C3333C16 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB