Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-3333C16-16GTZKW 16GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

G Skill Intl F4-3333C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 -74% 更低的延时
更快的读取速度，GB/s

17.2 13.6

测试中的平均数值
更快的写入速度，GB/s

12.9 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-3333C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 23
读取速度，GB/s

13.6 17.2
写入速度，GB/s

8.3 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 3227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-155.A00LF 8GB

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Kingston KH2400C15D4/8 8GB

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Corsair CMK16GX4M2K4133C19 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMK8GX4M1Z3200C16 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB