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Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-3600C17-16GTZKW 16GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
G Skill Intl F4-3600C17-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.6 left arrow 19.5
  • 写入速度，GB/s
    8.3 left arrow 15.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 3757

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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内存RAM
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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
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内存RAM
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G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
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内存RAM
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