Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-3600C17-8GTZKW 8GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

G Skill Intl F4-3600C17-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

17.7 13.6

测试中的平均数值
更快的写入速度，GB/s

14.5 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-3600C17-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

13.6 17.7
写入速度，GB/s

8.3 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 3547

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Samsung M378B5673EH1-CF8 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

AMD R5S38G1601U2S 8GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Asgard VMA45UG-MEC1U2BQ2 8GB

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Kingston HP16D3LS1KBGH/4G 4GB

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