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Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-3866C18-8GTZSW 8GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
G Skill Intl F4-3866C18-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 40
    左右 -122% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 18
  • 读取速度，GB/s
    13.6 left arrow 20.9
  • 写入速度，GB/s
    8.3 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 3668

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

G Skill Intl F4-3866C18-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT4G3S1339M.M16FKD 4GB
Crucial Technology CT4G3S1339M.M16FKD 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-4266C17-16GVKB 16GB
G Skill Intl F4-4266C17-16GVKB 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK64GX4M8A2666C16 8GB
Corsair CMK64GX4M8A2666C16 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905678-156.A00G 8GB
Kingston 9905678-156.A00G 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM