Micron Technology 16JTF25664AZ-1G4F1 2GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Micron Technology 8ATF51264AZ-2G1A2 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 -11% 更低的延时
更快的读取速度，GB/s

15.8 13.6

测试中的平均数值
更快的写入速度，GB/s

11.0 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 36
读取速度，GB/s

13.6 15.8
写入速度，GB/s

8.3 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 2417

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-140.A00LF 8GB

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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Corsair CM4B16G1J2400A16K2-O 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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