Micron Technology 16JTF51264HZ-1G6M1 4GB vs Avant Technology J642GU42J5213N1 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Avant Technology J642GU42J5213N1 16GB

Avant Technology J642GU42J5213N1 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Avant Technology J642GU42J5213N1 16GB

需要考虑的原因
Avant Technology J642GU42J5213N1 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 -4% 更低的延时
更快的读取速度，GB/s

14.6 12.9

测试中的平均数值
更快的写入速度，GB/s

10.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avant Technology J642GU42J5213N1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 27
读取速度，GB/s

12.9 14.6
写入速度，GB/s

9.0 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2577

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673FH0-CH9 2GB

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Avant Technology W642GU42J2320NH 16GB

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Team Group Inc. ZEUS-2133 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB