Micron Technology 16JTF51264HZ-1G6M1 4GB vs Corsair CM4X16GE2666Z16K4 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时

Corsair CM4X16GE2666Z16K4 16GB

需要考虑的原因
Corsair CM4X16GE2666Z16K4 16GB

报告一个错误

更快的读取速度，GB/s

14.8 12.9

测试中的平均数值
更快的写入速度，GB/s

13.1 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CM4X16GE2666Z16K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 39
读取速度，GB/s

12.9 14.8
写入速度，GB/s

9.0 13.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3017

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFRA266.C8FD1 8GB

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Samsung M393B5270CH0-CH9 4GB

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Kingston 99U5474-013.A00LF 2GB

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