Micron Technology 16JTF51264HZ-1G6M1 4GB vs Corsair CMW32GX4M4D3600C18 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Corsair CMW32GX4M4D3600C18 8GB

需要考虑的原因
Corsair CMW32GX4M4D3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.3 12.9

测试中的平均数值
更快的写入速度，GB/s

15.8 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMW32GX4M4D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.9 18.3
写入速度，GB/s

9.0 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3000C16-16GTRS 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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Kingston KHX16LC9/8GX 8GB

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Corsair CMD64GX4M8A2400C14 8GB