Micron Technology 16JTF51264HZ-1G6M1 4GB vs Corsair MK16GX44B3000C15 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Corsair MK16GX44B3000C15 4GB

需要考虑的原因
Corsair MK16GX44B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 -33% 更低的延时
更快的读取速度，GB/s

16.1 12.9

测试中的平均数值
更快的写入速度，GB/s

13.5 9.0

测试中的平均数值
更高的内存带宽，mbps

16000 12800

左右 1.25 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair MK16GX44B3000C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 21
读取速度，GB/s

12.9 16.1
写入速度，GB/s

9.0 13.5
内存带宽，mbps

12800 16000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-16000, 1.2V, TBD1 V, TBD2 V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

2112 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-140.A00LF 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Samsung M386A8K40BMB-CPB 64GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston KHYXPX-MID 8GB

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Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Corsair CMZ16GX3M2A1866C9 8GB

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Corsair CMR32GX4M4C3000C16 8GB

Corsair CMR32GX4M4C3000C16 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMSX64GX4M2A2933C19 32GB

Corsair CMSX64GX4M2A2933C19 32GB

Qimonda 64T128020EDL2.5C2 1GB

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Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

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Kingston 9905403-011.A03LF 2GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB