Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS8G4D240FSC.16FBR2 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSC.16FBR2 8GB

报告一个错误

更快的读取速度，GB/s

15.8 12.9

测试中的平均数值
更快的写入速度，GB/s

12.2 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.9 15.8
写入速度，GB/s

9.0 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2935

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMD32GX4M4B3866C18 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-4000C19-16GTRS 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Kingston 9905316-106.A02LF 1GB

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Corsair CMX4GX3M2A1600C9 2GB

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Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB