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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    12.9 left arrow 14.5
  • 写入速度，GB/s
    9.0 left arrow 11.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2516

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB RAM的比较

Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Corsair CMK64GX4M8B3200C16 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 99U5700-014.A00G 8GB
Kingston 99U5700-014.A00G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
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Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMU32GX4M4C3400C16 8GB
Corsair CMU32GX4M4C3400C16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
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Crucial Technology BL32G32C16U4WL.M16FB 32GB
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