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Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C14-16GTZKW 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3200C14-16GTZKW 16GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZKW 16GB

G Skill Intl F4-3200C14-16GTZKW 16GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
G Skill Intl F4-3200C14-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C14-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 26
  • 读取速度，GB/s
    12.9 left arrow 19.7
  • 写入速度，GB/s
    9.0 left arrow 15.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3832

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

G Skill Intl F4-3200C14-16GTZKW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMWX16GC3000C15W4 16GB
Corsair CMWX16GC3000C15W4 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston CBD32D4S2D8HD-16 16GB
Kingston CBD32D4S2D8HD-16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston KKRVFX-MIE 8GB
Kingston KKRVFX-MIE 8GB
内存RAM