Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3866C18-16GTZR 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

G Skill Intl F4-3866C18-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

17.5 12.9

测试中的平均数值
更快的写入速度，GB/s

17.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3866C18-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.9 17.5
写入速度，GB/s

9.0 17.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3697

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP125U64CP8-S6 2GB

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Apacer Technology 78.CAGPP.ARC0B 8GB

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AMD R538G1601U2S 8GB

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Kingston 9965662-002.A01G 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Avant Technology J642GU42J9266N2 16GB

Avant Technology J642GU42J9266N2 16GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLS4G4D240FSA.M8F 4GB

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Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB