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Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 26
  • 读取速度，GB/s
    12.9 left arrow 17.7
  • 写入速度，GB/s
    9.0 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3017

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB RAM的比较

Corsair CML16GX3M2A1600C10 8GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMR16GX4M2E4266C19 8GB
Corsair CMR16GX4M2E4266C19 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
内存RAM
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
SK Hynix HMA84GR7MFR4N-UH 32GB
SK Hynix HMA84GR7MFR4N-UH 32GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMW32GX4M4C3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2933C14-8GTZRX 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
内存RAM