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Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9965662-002.A01G 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kingston 9965662-002.A01G 16GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Kingston 9965662-002.A01G 16GB

Kingston 9965662-002.A01G 16GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.3
    测试中的平均数值
Kingston 9965662-002.A01G 16GB 需要考虑的原因
Kingston 9965662-002.A01G 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9965662-002.A01G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 34
  • 读取速度，GB/s
    12.9 left arrow 8.6
  • 写入速度，GB/s
    9.0 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2079

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Kingston 9965662-002.A01G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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