Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kingston HP26D4S9D8MJ-16 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Kingston HP26D4S9D8MJ-16 16GB

Kingston HP26D4S9D8MJ-16 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 119

左右 76% 更低的延时
更快的读取速度，GB/s

12.9 1.8

测试中的平均数值
更快的写入速度，GB/s

9.0 2.0

测试中的平均数值

Kingston HP26D4S9D8MJ-16 16GB

需要考虑的原因
Kingston HP26D4S9D8MJ-16 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston HP26D4S9D8MJ-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 119
读取速度，GB/s

12.9 1.8
写入速度，GB/s

9.0 2.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2133C11D3/4GX 4GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston KF3200C16D4/8GX 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Kingston KVR16N11/8-SP 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Crucial Technology CT16G4DFS8266.C8FB 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB