Micron Technology 16JTF51264HZ-1G6M1 4GB vs Micron Technology 4ATF51264HZ-2G3B2 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Micron Technology 4ATF51264HZ-2G3B2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B2 4GB

报告一个错误

更快的读取速度，GB/s

15.4 12.9

测试中的平均数值
更快的写入速度，GB/s

11.2 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.9 15.4
写入速度，GB/s

9.0 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 9905598-006.A00G 8GB

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Kingston 9965433-034.A00LF 4GB

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Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

Kingston 99U5584-001.A00LF 4GB

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A-DATA Technology DDR4 2400 2OZ 8GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KHX3000C16/16GX 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMK64GX4M8B2800C14 8GB

Corsair CMK64GX4M8B2800C14 8GB