Micron Technology 16JTF51264HZ-1G6M1 4GB vs Micron Technology 8ATF1G64HZ-2G6D1 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Micron Technology 8ATF1G64HZ-2G6D1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6D1 8GB

报告一个错误

更快的读取速度，GB/s

15.8 12.9

测试中的平均数值
更快的写入速度，GB/s

12.4 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.9 15.8
写入速度，GB/s

9.0 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 2830

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9ASF1G72PZ-2G3B1 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB