Micron Technology 16JTF51264HZ-1G6M1 4GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

更快的读取速度，GB/s

12.9 12

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

更快的写入速度，GB/s

9.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.9 12.0
写入速度，GB/s

9.0 9.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F4-2133C15-8GIS 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB