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Micron Technology 16JTF51264HZ-1G6M1 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
39
左右 28% 更低的延时
需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
报告一个错误
更快的读取速度,GB/s
15.1
12.9
测试中的平均数值
更快的写入速度,GB/s
12.6
9.0
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
39
读取速度,GB/s
12.9
15.1
写入速度,GB/s
9.0
12.6
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2112
3000
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
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Kingston 9965525-018.A00LF 4GB
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Crucial Technology BL16G32C16U4RL.M16FE 16GB
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G Skill Intl F4-2400C15-8GFXR 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
报告一个错误
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Bug description
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