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Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Patriot Memory (PDP Systems) 3000 C16 Series 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Patriot Memory (PDP Systems) 3000 C16 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.9 left arrow 16.9
  • 写入速度，GB/s
    9.0 left arrow 13.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3222

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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Kingston 99U5595-005.A00LF 2GB
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内存RAM
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内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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内存RAM
Team Group Inc. ZEUS-2133 8GB
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内存RAM
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内存RAM