Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M378A1G43EB1-CPB 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Samsung M378A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB

报告一个错误

更快的读取速度，GB/s

15.4 12.9

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.9 15.4
写入速度，GB/s

9.0 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

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Hewlett-Packard 7TE39AA#ABC 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB