Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Kingston 9905630-033.A00G 16GB

总分

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分

Kingston 9905630-033.A00G 16GB

Kingston 9905630-033.A00G 16GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时
更快的读取速度，GB/s

15.4 11.5

测试中的平均数值
更快的写入速度，GB/s

11.3 5.4

测试中的平均数值

Kingston 9905630-033.A00G 16GB

需要考虑的原因
Kingston 9905630-033.A00G 16GB

报告一个错误

更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Kingston 9905630-033.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

15.4 11.5
写入速度，GB/s

11.3 5.4
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2696 1956

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

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Samsung M378B5273DH0-CH9 4GB

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Kingston KHX2400C1C14/16G 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

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Corsair CMK16GX4M2Z3200C16 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CMT16GX4M2C3200C14 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB