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Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs A-DATA Technology AO2P21FC8R2-BRGS 8GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
A-DATA Technology AO2P21FC8R2-BRGS 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
18.7
测试中的平均数值
更快的写入速度,GB/s
2,107.0
13.5
测试中的平均数值
需要考虑的原因
A-DATA Technology AO2P21FC8R2-BRGS 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
58
左右 -115% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
27
读取速度,GB/s
4,025.3
18.7
写入速度,GB/s
2,107.0
13.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
670
3495
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMD8GX4M2B3600C18 4GB
G Skill Intl F5-5600J4040C16G 16GB
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SK Hynix HMT351S6CFR8C-PB 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905678-105.A00G 8GB
Apacer Technology 78.B1GET.AU00C 4GB
Corsair CMD32GX4M4B3866C18 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.C1GS7.AUW0B 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMK16GX4M4B3200C16 4GB
Samsung M471B1G73QH0-YK0 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905625-065.A00G 16GB
报告一个错误
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