Micron Technology 18HTF12872AY-800F1 1GB vs AMD R744G2400U1S-UO 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 66

左右 12% 更低的延时
更快的读取速度，GB/s

4 16.7

测试中的平均数值

AMD R744G2400U1S-UO 4GB

需要考虑的原因
AMD R744G2400U1S-UO 4GB

报告一个错误

更快的写入速度，GB/s

8.5 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

AMD R744G2400U1S-UO 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 66
读取速度，GB/s

4,025.3 16.7
写入速度，GB/s

2,107.0 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 1912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905630-051.A00G 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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G Skill Intl F4-3333C16-8GTZKW 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Team Group Inc. TEAMGROUP-D4-3600 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB