Micron Technology 18HTF12872AY-800F1 1GB vs Corsair CMK16GX4M2G4000C16 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 19.9

测试中的平均数值
更快的写入速度，GB/s

2,107.0 19.5

测试中的平均数值

Corsair CMK16GX4M2G4000C16 8GB

需要考虑的原因
Corsair CMK16GX4M2G4000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 58

左右 -152% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMK16GX4M2G4000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 23
读取速度，GB/s

4,025.3 19.9
写入速度，GB/s

2,107.0 19.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 4150

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Corsair CMU32GX4M2C3000C15 16GB

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AMD R538G1601U2S 8GB

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Avant Technology J641GU42J7240ND 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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V-GEN D4H8GL26A8TS6 8GB