Micron Technology 18HTF12872AY-800F1 1GB vs Crucial Technology BLS8G4D240FSA.16FBD 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.7

测试中的平均数值

Crucial Technology BLS8G4D240FSA.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 -87% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 31
读取速度，GB/s

4,025.3 17.6
写入速度，GB/s

2,107.0 12.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 3084

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMU64GX4M4C3000C15 16GB

Corsair CMU64GX4M4C3000C15 16GB

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Kingston 99U5458-008.A00LF 4GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Kingston 9905403-011.A03LF 2GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB