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Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CB8GS2666.C8ET 8GB

Micron Technology 18HTF12872AY-800F1 1GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分
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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异 规格 评论

差异

Micron Technology 18HTF12872AY-800F1 1GB 需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14
    测试中的平均数值
Crucial Technology CB8GS2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 58
    左右 -49% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 2,107.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CB8GS2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 39
  • 读取速度，GB/s
    4,025.3 left arrow 14.0
  • 写入速度，GB/s
    2,107.0 left arrow 9.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    670 left arrow 2221

Micron Technology 18HTF12872AY-800F1 1GB RAM的比较

Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Crucial Technology CB8GS2666.C8ET 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
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G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C15-16GVK 16GB
G Skill Intl F4-3200C15-16GVK 16GB
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SK Hynix HYMP125U64CP8-S6 2GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Patriot Memory (PDP Systems) PSD416G26662 16GB
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Samsung M3 78T3354BZ0-CCC 256MB
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Crucial Technology BL16G36C16U4B.M8FB1 16GB
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SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Micron Technology V-GeN D4V16GL24A8R 16GB
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Samsung M3 78T2953EZ3-CF7 1GB
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Micron Technology 36ASF4G72PZ-2G6D1 32GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
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PNY Electronics PNY 2GB
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G Skill Intl F4-3200C14-32GTZR 32GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Crucial Technology CT8G4DFS8213.M8FH 8GB
内存RAM
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Smart Modular SH564128FH8NZQNSCG 4GB
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Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston 8ATF1G64AZ-2G3A141 8GB
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