Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2133C15-4GRR 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.9

测试中的平均数值

G Skill Intl F4-2133C15-4GRR 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 58

左右 -61% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2133C15-4GRR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 36
读取速度，GB/s

4,025.3 14.7
写入速度，GB/s

2,107.0 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2570

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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EVGA 16G-D4-2800-MR 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Essencore Limited KD4AGS88C-26N1900 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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Mushkin MRA4S300GJJM16G 16GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9965662-012.A01G 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 99U5471-052.A00LF 8GB

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G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB