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Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C15-4GRK 4GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2400C15-4GRK 4GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
G Skill Intl F4-2400C15-4GRK 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
13.2
测试中的平均数值
更快的写入速度,GB/s
2,107.0
10.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C15-4GRK 4GB
报告一个错误
低于PassMark测试中的延时,ns
39
58
左右 -49% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C15-4GRK 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
39
读取速度,GB/s
4,025.3
13.2
写入速度,GB/s
2,107.0
10.7
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
670
2651
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
G Skill Intl F4-2400C15-4GRK 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT102464BF160B.C16 8GB
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G Skill Intl F4-4266C19-32GTZR 32GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3733C17-8GTZSW 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMSX64GX4M2A2666C18 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2666C16D4/16GX 16GB
Samsung M391B5673FH0-CH9 2GB
Corsair CMU16GX4M2A2666C16 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK64GX4M8A2400C14 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KF3200C20S4/8G 8GB
报告一个错误
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Bug description
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