Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

G Skill Intl F4-2400C17-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 -87% 更低的延时
更快的写入速度，GB/s

9.8 2,107.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C17-16GIS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 31
读取速度，GB/s

4,025.3 16.7
写入速度，GB/s

2,107.0 9.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2888

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F4-3200C16-8GVKB 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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Corsair CMK16GX4M2K4333C19 8GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-4000C19-4GTZ 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB