Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3200C16-8GSX 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值

G Skill Intl F4-3200C16-8GSX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSX 8GB

报告一个错误

低于PassMark测试中的延时，ns

55 58

左右 -5% 更低的延时
更快的写入速度，GB/s

8.8 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3200C16-8GSX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 55
读取速度，GB/s

4,025.3 19.5
写入速度，GB/s

2,107.0 8.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

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Samsung M471A5244CB0-CRC 4GB

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Samsung M378A1K43EB2-CWE 8GB

Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

Kingston ACR512X64D3S13C9G 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB