Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3600C16-8GTZNC 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值
更快的写入速度，GB/s

2,107.0 17.2

测试中的平均数值

G Skill Intl F4-3600C16-8GTZNC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZNC 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 58

左右 -123% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3600C16-8GTZNC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 26
读取速度，GB/s

4,025.3 19.5
写入速度，GB/s

2,107.0 17.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 3840

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-3000C16-8GVSB 8GB

G Skill Intl F4-3000C16-8GVSB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Panram International Corporation PUD43000C154G4NJW 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMK8GX4M1A2400C16 8GB

Corsair CMK8GX4M1A2400C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB