Micron Technology 18HTF12872AY-800F1 1GB vs InnoDisk Corporation 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

InnoDisk Corporation 16GB

需要考虑的原因
InnoDisk Corporation 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 58

左右 -53% 更低的延时
更快的读取速度，GB/s

7.7 4

测试中的平均数值
更快的写入速度，GB/s

8.2 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

InnoDisk Corporation 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 38
读取速度，GB/s

4,025.3 7.7
写入速度，GB/s

2,107.0 8.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Samsung M471A1K43DB1-CWE 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Kingston KHX3600C18D4/16GX 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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InnoDisk Corporation 16GB

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Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

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Mushkin MB[A/B]4U240FFFF16G 16GB