Micron Technology 18HTF12872AY-800F1 1GB vs Kingston 9905701-022.A00G 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Kingston 9905701-022.A00G 16GB

Kingston 9905701-022.A00G 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

Kingston 9905701-022.A00G 16GB

需要考虑的原因
Kingston 9905701-022.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更快的写入速度，GB/s

9.4 2,107.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 9905701-022.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,025.3 15.9
写入速度，GB/s

2,107.0 9.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

670 2505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Essencore Limited KD4AGSA8A-32N2200 16GB

Essencore Limited KD4AGSA8A-32N2200 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CM4B8G2J2666A15D 8GB

Corsair CM4B8G2J2666A15D 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Corsair VS2GB1333D4 2GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB