Micron Technology 18HTF12872AY-800F1 1GB vs Kingston KTP9W1-MIE 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.2

测试中的平均数值

Kingston KTP9W1-MIE 16GB

需要考虑的原因
Kingston KTP9W1-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KTP9W1-MIE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

4,025.3 15.7
写入速度，GB/s

2,107.0 12.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

670 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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AMD R744G2133U1S 4GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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A-DATA Technology VDQVE1B16 2GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

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SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

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Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB