Micron Technology 18HTF12872AY-800F1 1GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,107.0 11.0

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A2 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 58

左右 -61% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 36
读取速度，GB/s

4,025.3 15.8
写入速度，GB/s

2,107.0 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2417

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264AC800.C16FC 4GB

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A-DATA Technology DDR4 4133 8GB

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AMD R538G1601U2S-UO 8GB

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Qimonda 64T128020EDL2.5C2 1GB

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Kingston KF2933C17S4/32G 32GB

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Corsair CMR32GX4M4C3000C16 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9965669-005.A01G 16GB

Kingston 9965669-005.A01G 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3200C15-16GVR 16GB