Micron Technology 18HTF12872AY-800F1 1GB vs Mushkin MRA4S300GJJM16G 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 78

左右 26% 更低的延时
更快的读取速度，GB/s

4 12.1

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.3

测试中的平均数值

Mushkin MRA4S300GJJM16G 16GB

需要考虑的原因
Mushkin MRA4S300GJJM16G 16GB

报告一个错误

更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Mushkin MRA4S300GJJM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 78
读取速度，GB/s

4,025.3 12.1
写入速度，GB/s

2,107.0 10.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C18-16GTZN 16GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M471A2K43CBCBCRC 16GB

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SK Hynix DDR2 800 2G 2GB

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Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

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