Micron Technology 18HTF12872AY-800F1 1GB vs SK Hynix HMAA4GU6AJR8N-XN 32GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值
更快的写入速度，GB/s

2,107.0 14.1

测试中的平均数值

SK Hynix HMAA4GU6AJR8N-XN 32GB

需要考虑的原因
SK Hynix HMAA4GU6AJR8N-XN 32GB

报告一个错误

低于PassMark测试中的延时，ns

36 58

左右 -61% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 36
读取速度，GB/s

4,025.3 16.5
写入速度，GB/s

2,107.0 14.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

670 3414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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