Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

差异规格评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

更快的写入速度，GB/s

8.2 7.5

测试中的平均数值

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

需要考虑的原因
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 52

左右 -86% 更低的延时
更快的读取速度，GB/s

14.4 10.2

测试中的平均数值
更高的内存带宽，mbps

21300 17500

左右 1.22 更高的带宽

规格

完整的技术规格清单

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

52 28
读取速度，GB/s

10.2 14.4
写入速度，GB/s

8.2 7.5
内存带宽，mbps

17500 21300

Other

描述

PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2319 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB