Micron Technology 8ATF1G64HZ-3G2J1 8GB vs Kingston KVR26N19D8/16 16GB

总分

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

总分

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

差异规格评论

差异

Micron Technology 8ATF1G64HZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 54

左右 37% 更低的延时
更快的读取速度，GB/s

15.6 7.6

测试中的平均数值
更快的写入速度，GB/s

11.9 7.7

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Kingston KVR26N19D8/16 16GB

需要考虑的原因
Kingston KVR26N19D8/16 16GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Kingston KVR26N19D8/16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 54
读取速度，GB/s

15.6 7.6
写入速度，GB/s

11.9 7.7
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2812 1611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HYMP112U64CP8-Y5 1GB

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Panram International Corporation PUD42400C154G2NJK 4GB

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Samsung M378B5173QH0-CK0 4GB

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Kingston HX316C10F/4 4GB

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Crucial Technology BLS16G4D240FSE.16FAD 16GB

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Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-2133C15-16GVR 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB