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Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

差异 规格 评论

差异

Micron Technology 8ATF1G64HZ-3G2J1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 -36% 更低的延时

规格

完整的技术规格清单
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 25
  • 读取速度，GB/s
    15.6 left arrow 14.3
  • 写入速度，GB/s
    11.9 left arrow 10.7
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2812 left arrow 2583

Micron Technology 8ATF1G64HZ-3G2J1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
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Kingston 99U5471-020.A00LF 4GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C1C14/16G 16GB
Kingston KHX2400C1C14/16G 16GB
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Corsair CMK16GX4M2E4000C19 8GB
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Patriot Memory (PDP Systems) PSD22G6672 2GB
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Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
Samsung M378A1K43EB2-CWE 8GB
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Kingston 9905584-016.A00LF 4GB
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Kingston KHYXPX-HYJ 8GB
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