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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Asgard VMA45UG-MEC1U2AW2 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Asgard VMA45UG-MEC1U2AW2 8GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Asgard VMA45UG-MEC1U2AW2 8GB 需要考虑的原因
Asgard VMA45UG-MEC1U2AW2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 51
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Asgard VMA45UG-MEC1U2AW2 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 34
  • 读取速度，GB/s
    15.6 left arrow 17.2
  • 写入速度，GB/s
    11.8 left arrow 13.5
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 3425

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Asgard VMA45UG-MEC1U2AW2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-2933C14-16GFX 16GB
G Skill Intl F4-2933C14-16GFX 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-4000C19-16GTRS 16GB
G Skill Intl F4-4000C19-16GTRS 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GU6CJR8N-XN 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-8GRK 8GB
G Skill Intl F4-2400C15-8GRK 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston 9965604-008.C00G 8GB
Kingston 9965604-008.C00G 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Corsair CMWX8GD3200C16W2E 8GB
Corsair CMWX8GD3200C16W2E 8GB
内存RAM