Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Corsair CMD32GX4M4C3200C14T 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 15.5

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMD32GX4M4C3200C14T 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C14T 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 51

左右 -50% 更低的延时
更快的写入速度，GB/s

14.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMD32GX4M4C3200C14T 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 34
读取速度，GB/s

15.6 15.5
写入速度，GB/s

11.8 14.9
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451R7AFR8N-UH 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMX8GX3M2A1600C11 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Samsung M471A2K43BB1-CPB 16GB

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SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Kingston 9905678-102.A00G 8GB

Kingston 9905678-102.A00G 8GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB